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Other articles related with "silicon-germanium heterojunction bipolar transistor (SiGe HBT)"：
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76106 |
Jia-Nan Wei(魏佳男), Chao-Hui He(贺朝会), Pei Li(李培), Yong-Hong Li(李永宏), Hong-Xia Guo(郭红霞) |
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Impact of proton-induced alteration of carrier lifetime on single-event transient in SiGe heterojunction bipolar transistor |
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Chin. Phys. B
2019 Vol.28 (7): 76106-076106
[Abstract]
(607)
[HTML 1 KB]
[PDF 1215 KB]
(204)
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